Very high plasma densities can be achieved, though etch profiles tend to be more isotropic. In ICP type of system, the plasma is generated with an RF powered magnetic field. High-energy ions from the plasma attack the wafer surface and react with it. I am trying to etch polymers with SF6/O2/CHF3 gas chemistry at 30mTorr, 200W. The plasma is generated under low pressure (vacuum) by an electromagnetic field. Subject: mems-talk Reasons for Plasma Flickering in Oxford Plasmalab 80Plus RIE system Hi Does any one know what could be the reasons for Plasma Flickering in Oxford Plasmalab 80 Plus RIE system. RIE uses chemically reactive plasma to remove material deposited on wafers.
Oxford plasmalab system 100 manual#
The manual load-lock system can accommodate substrates ranging from 200 mm diameter wafers down to small pieces. The tool is equipped with a temperature controlled electrode to help users tailor their etch feature profiles. The diameter of the source only allows it to uniformly etch the center 1.5 of the wafer, making it perfect for pieces. It’s an ICP based etcher designed to etch pieces mounted to a 100 mm wafer. Suggested process recipes from Oxford Plasma Tech. The Oxford Plasmalab System 100 is a 100 mm reactive ion etching tool designed for a variety of etches. Inductive Coupled Plasma (ICP), Helium backside cooling, temperature controlled electrode. Process gases O 2, Ar, CF 4, CHF 3, SF 6, Cl 2. The Oxford Plasmalab 100 inductively coupled plasma (ICP) etcher is a multipurpose fluorocarbon based system that provides users anisotropic etching of silicon, silicon oxide, and other dielectric materials. Oxford Plasmalab 100 Responsible: Anders Liljeborg, Adrian Iovan. Location:Thin Films Deposition Description: